Content of review 1, reviewed on June 23, 2024
The authors submitted a research report on organic semiconductor P4T2F-HD crystal orientation on charge transport properties. The crystal structure (and preferred orientation) were confirmed by optical and X-ray diffraction methods. Standard field-effect transistor parameters were used to measure the effect on the effective electrical properties, and direct observation was used to measure the transport of charge at the microscopic level. Obtained mobilities in significant directions are almost identical regardless of the applied characterization method (OFET vs SHG). The menuscript reaches high enough quality and desires to be published. As a result, my comments should be taken as advice to improve the impact of the paper.
(1) Recrystallization issue. Since the laser intensity must be extremely high to record nonlinear optical phenomenon such as SHG, the recrystallization may take a place. Appropriate discussion should be included.
(2) The irradiation wavelength is out of recorded absorbance spectrum. The verification of low (or almost zero) absorbance is required to be sure that the laser wil not generate additional charge carriers.
O am pleased to read this manuscript and I recommend it for publication. The above-mentioned comments are optional only.
Source
© 2024 the Reviewer.
Content of review 2, reviewed on July 30, 2024
The authors submitted a modified manuscript that follows all the recommendations of the reviewers'. As a result, I have no other option but to recommend to accept the manuscript.
Source
© 2024 the Reviewer.
References
Radhe, S., Takaaki, M., Rajiv, P. 2024. Anisotropic charge transport study of highly oriented P4T2F-HD thin film fabricated at air-liquid interface through second harmonic generation (SHG) analysis. RSC Applied Interfaces.
