The auhors submitted an interesting work on the synthesis of black arsenic phosphorous. They use a new synthesis and alloying strategy in order to produce black arsenic phosphorous which can used for semiconducter applications as it possesses a tunable band gap. Here the methods base on X-ray diffraction, transmission electron microscopy, density functional theory calculations, atomic force measurements, polarization-resolved infrafed spectroscopy, Raman spectroscopy and the determination of transfer curves in a field-emission transistor configuration of the material. A small typo occured (van der Walls instead of van der Waals). The study is informative and proposes future applications which might arise from the synthesized material. Thus, this article can be accepted as is.